%0 Journal Article
%T Energy Band Discontinuity at Polycrystalline CdS/CdTe Heterointerface<br>多晶CdS/CdTe异质结界面的能带偏移
%A Huang Daihui
%A Wu Haixia
%A Li Wei
%A Feng Lianghuan
%A <br>黄代绘
%A 吴海霞
%A 李卫
%A 冯良桓
%J 半导体学报
%D 2005
%I 
%X 采用真空蒸发法制备了CdS和CdTe，并对其结构和光学性质进行了研究．原位制备了衬底沿(001)高度择优取向的CdS/CdTe异质结，研究了其结构、电子学性质．获得的CdS/CdTe半导体异质结的价带偏移ΔEV=0.98eV±0.05eV，导带偏移ΔEc=0.07±0.1eV．
%K vacuum deposition
%K CdS/CdTe heterojuntion
%K valence band offset
%K conduction band offset<br>真空沉积
%K CdS/CdTe异质结
%K 价带偏移
%K 导带偏移
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D46A06D7F0563E38&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=EEBB803F60D7DC4B&eid=D5BEB939E141E547&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=8