%0 Journal Article
%T Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates
%A Li Jingchun
%A Tan Jing
%A YANG Mohua
%A Zhang Jing
%A Xu Wanjing
%A <br>Li Jingchun
%A Tan Jing
%A Yang Mohu
%A Zhang Jing
%A and Xu Wanjing
%J 半导体学报
%D 2005
%I 
%X Strained-Si pMOSFETs on very thin relaxed virtual SiGe substrates are presented.The 240nm relaxed virtual Si0.8Ge0.2 layer on 100nm low-temperature Si(LT-Si) is grown on Si(100) substrates by molecular beam epitaxy.LT-Si buffer layer is used to release stress of the SiGe layer so as to make it relaxed.DCXRD,AFM,and TEM measurements indicate that the strain relaxed degree of SiGe layer is 85%,RMS roughness is 1.02nm,and threading dislocation density is at most 1e7cm－2.At room temperature,a maximum hole mobility of strained-Si pMOSFET is 140cm2/（V·s）.Device performance is comparable to that of devices achieved on several microns thick relaxed virtual SiGe substrates.
%K strained-Si
%K virtual SiGe substrates
%K pMOSFET<br>strained-Si
%K virtual
%K SiGe
%K substrates
%K pMOSFET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=51549A376997C6DF&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=E348995F86F60FD3&eid=745C7FAEA69986C7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=9