%0 Journal Article
%T Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate
%A Shen Xiaoming
%A Wang Yutian
%A Wang Jianfeng
%A Liu Jianping
%A Zhang Jicai
%A Guo Liping
%A Jia Quanjie
%A Jiang Xiaoming
%A Hu Zhengfei
%A Yang Hui
%A Liang Junwu
%A <br>Shen Xiaoming
%A Wang Yutian
%A Wang Jianfeng
%A Liu Jianping
%A Zhang Jicai
%A Guo Liping
%A Jia Quanjie
%A Jiang Xiaoming
%A Hu Zhengfei
%A Y
%J 半导体学报
%D 2005
%I 
%X GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates.In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the Xray diffraction pole figures.Moreover,{111} φ scans with χ at 55°reveal the abnormal distribution of Bragg diffractions.The extra intensity maxima in the pole figures shows that the process of twinning plays a dominating role during the growth process.It is suggested that the polarity of {111} facets emerged on (001) surface will affect the growth twin nucleation at the initial stages of GaN growth on GaAs(001) substrates.It is proposed that twinning is prone to occurring on {111}B,Nterminated facets.
%K X-ray diffraction
%K metalorganic chemical vapor deposition
%K nitrides<br>X-ray
%K diffraction
%K metalorganic
%K chemical
%K vapor
%K deposition
%K nitrides
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D275EE1EF7BB3E6B&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=9107B2E171152411&eid=7C13E30F5EDBE7AB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11