%0 Journal Article
%T Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films<br>Temperature Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films
%A LIN J Y
%A Jang H X
%A WANG Ruimin
%A Chen Guangde
%A LIN J Y
%A Jang H X
%A <br>Wang Ruimin
%A Chen Guangde
%A Lin J Y
%A and Jang H X
%J 半导体学报
%D 2005
%I 
%X Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K.A peak at 247cm -1 is observed in both Raman spectra of GaN and Mg-doped GaN.It is suggested that the defect-induced scattering is origin of the mode.The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded.Furthermore,the differences of E_2 and A_1(LO) modes in two samples are also discussed.The stress relaxation is observed in Mg-doped GaN.
%K GaN
%K p-type GaN
%K Raman scattering
%K defect modes<br>GaN
%K p-type
%K GaN
%K Raman
%K scattering
%K defect
%K modes
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E0D5919B45015C6F&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=20C9FB8C7B4A22AD&eid=DB7B2C790D19BE6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=24