%0 Journal Article
%T Growth of Strained Si1-xGex Layer by UV/UHV/CVD<br>Growth of Strained Si1－xGex Layer by UV/UHV/CVD
%A Hu Huiyong
%A Zhang Heming
%A Dai Xianying
%A Li Kaicheng
%A Wang Wei
%A Zhu Yonggang
%A Wang Shunxiang
%A Cui Xiaoying
%A Wang Xiyuan
%A <br>Hu Huiyong
%A Zhang Heming
%A Dai Xianying
%A Li Kaicheng
%A Wang Wei
%A Zhu Yonggang
%A Wang Shunxiang
%A Cui Xiaoying
%A and Wang Xiyuan
%J 半导体学报
%D 2005
%I 
%X Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.
%K Si_
%K 1-xGe_x
%K ultrahigh vacuum
%K ultraviolet light
%K chemical vapor deposition<br>Si1－xGex
%K ultrahigh
%K vacuum
%K ultraviolet
%K light
%K chemical
%K vapor
%K deposition
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C84BB35F7CDC23AE&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=9A596D09E9486F3E&eid=0636354D8CF77519&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=10