%0 Journal Article
%T Narrow-Line Light Emission from Porous Silicon Microcavities Prepared by Pulsed Electrochemical Etching Method<br>电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔
%A Xu Shaohui
%A Xiong Zuhong
%A Gu Lanlan
%A Liu Yi
%A Ding Xunmin
%A Hou Xiaoyuan
%A <br>徐少辉
%A 熊祖洪
%A 顾岚岚
%A 柳毅
%A 丁训民
%A 侯晓远
%J 半导体学报
%D 2002
%I 
%X Porous silicon microcavities have been prepared by the pulsed electrochemical etching method(PEEM).The orthogonal experimental method has been adopted to optimize the experimental conditions for fabrication of porous silicon microcavities.The optimal conditions obtained from experiments are:the period of 5ms;the duty cycle of 5/10 and the Bragg reflector consisting of 6 pairs of quarter wave length layers.Under this condition,the full width at half maximum of the light emission peak is reduced to be 6nm.A dynamic etching model based on the diffusion of HF acid is used to explain the experimental results.It indicates that the narrow emission peak of porous silicon microcavities prepared by PEEM can be attributed not only to the longitudinal etching,but also to the transverse etching (soaking etching) of HF.
%K porous silicon
%K microcavity
%K photoluminescence<br>多孔硅
%K 微腔
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8AC144E42A7CF338&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=38B194292C032A66&sid=4E6F5C60B72D9B1C&eid=7979125BBE749348&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=3