%0 Journal Article
%T Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation
%A Wu Junfeng
%A Zhong Xinghua
%A Li Duoli
%A Bi Jinshun
%A Hai Chaohe
%A <br>Wu Junfeng
%A Zhong Xinghu
%A Li Duoli
%A Bi Jinshun
%A and Hai Chaohe
%J 半导体学报
%D 2005
%I 
%X :FB (floating-body) and BC (body-contact) partially depleted SOI nMOSFETs with HBC(half-back-channel) implantation are fabricated.Test results show that such devices have good performance in delaying the occurrence of the "kink" phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOSFETs,while not decreasing the threshold voltage of the back gate obviously.Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the "kink" effect.A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the "kink" effect.
%K PDSOI
%K HBC
%K breakdown
%K kink effect<br>PDSOI
%K HBC
%K breakdown
%K kink
%K effect
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=671B460B9C79B936&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=B56549D8EAA47873&eid=3907BD093A0059AA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=7