%0 Journal Article
%T Investigation on Persistent Photoconductivity Effect in Cubic GaN<br>立方相GaN的持续光电导
%A Zhang Zehong
%A Zhao Degang
%A Sun Yuanping
%A Feng Zhihong
%A Shen Xiaoming
%A Zhang Baoshun
%A Feng Gan
%A Zheng Xinhe
%A Yang Hui
%A <br>张泽洪
%A 赵德刚
%A 孙元平
%A 冯志宏
%A 沈晓明
%A 张宝顺
%A 冯淦
%A 郑新和
%A 杨辉
%J 半导体学报
%D 2003
%I 
%X The persistent photoconductivity (PPC) effect in unintentional doped cubic GaN grown on GaAs(001) substrate by metalorganic chemical vapor deposition (MOCVD) is studied.It is widely accepted that the PPC effect in hexagonal GaN is related to the yellow luminescence (YL).However,we observe that in cubic GaN,it is induced by the unintentionally incorporated hexagonal crystallites in cubic matrix and has nothing to do with YL.We suggest that the spatial carrier separation caused by the barrier between the cubic matrix and hexagonal crystallites is the reason of the PPC effect.A barrier-limited model is developed to analyze the decay process,and the decay kinetics is discussed.The result of data fitting confirms our model and conclusion.
%K GaN
%K persistent photoconductivity
%K cubic GaN<br>GaN
%K 持续光电导
%K 立方相
%K 空间载流子分离
%K 势垒限制复合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5F85C793DBFFEEB1&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=CA4FD0336C81A37A&sid=339D79302DF62549&eid=16D8618C6164A3ED&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=20