%0 Journal Article
%T Planarizing Deposited SiO2 Thin Films Using ISSG Annealing Technology<br>利用ISSG退火技术实现沉积二氧化硅薄膜平坦化
%A Tao Kai
%A Sun Zhenhai
%A Sun Ling
%A Guo Guochao
%A <br>陶凯
%A 孙震海
%A 孙凌
%A 郭国超
%J 半导体学报
%D 2006
%I 
%X Due to the reaction vapor concentration gradient in LPCVD furnaces,as-grown oxide films tend to be thinner at the wafer edge than at the wafer center.ISSG (in-situ steam generation) annealing,a new low-pressure rapid oxidation annealing technique,is used to compensate this non-uniformity in thickness from oxide deposition and obtain uniform SiO2 thin films.Experimental data show that the variation of the oxide thickness (between the maximum and the minimum) is reduced from 0.76 to 0.16nm,and the standard deviation for 49 points is reduced from 0.25 to 0.04nm.The ISSG-annealed oxide films,with a tunneling electrical field improved to 4.3MV/cm,also show better interface quality than those annealed by conventional O.2.The results provide a convenient and effective solution for planarizing deposited SiO2 thin films for VLSI manufacture
%K :ISSG anneal
%K LPCVD
%K thin film planarization<br>ISSG退火
%K 低压化学气相沉积
%K 薄膜平坦化
%K 利用
%K 退火技术
%K 沉积
%K 二氧化硅薄膜
%K 平坦化
%K Technology
%K Annealing
%K 意义
%K 生产
%K 结果
%K 快速退火工艺
%K 氧气
%K 界面
%K 场强
%K 隧穿
%K 标准偏差
%K 厚度值
%K 最大值与最小值
%K 厚度波动
%K 表面
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C6A7F219D57E3296&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=F654D651B5009E39&eid=DC8E8C328836185A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8