%0 Journal Article
%T Sub-1V CMOS Voltage Reference Based on Weighted Vgs
%A Zhang Xun
%A Wang Peng
%A Jin Dongming
%A <br>Zhang Xun
%A Wang Peng
%A Jin Dongming
%J 半导体学报
%D 2006
%I 
%X 提出了一种新型CMOS恒压源的制作方案,它基于nMOS和pMOS的饱和区栅源电压随温度变化权重不同的原理,将两者做相关运算,得到零温度系数的恒压源.该电压源没有采用二极管和寄生三极管,并用SMIC 0.18μm数模混合工艺模型参数仿真并制造.测试结果表明,温度系数达到了44ppm/℃,PSRR为-46dB,650mV以上的电源电压就可以完全正常工作.芯片面积约为0.05mm2.
%K voltage reference
%K temperature coefficient
%K power supply rejection ratio<br>恒压源
%K 温度系数
%K 电源电压抑制比
%K voltage
%K reference
%K temperature
%K coefficient
%K power
%K supply
%K rejection
%K ratio
%K 权重
%K CMOS
%K 恒压源
%K Weighted
%K Based
%K Reference
%K active
%K area
%K works
%K above
%K measurements
%K temperature
%K coefficient
%K technology
%K circuit
%K simulated
%K bipolar
%K transistors
%K used
%K voltage
%K reference
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=772E77CFEA28B2F9&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=94C357A881DFC066&sid=786A9BAE5CF9B9EE&eid=583C993D4E08F5CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=11