%0 Journal Article
%T Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD<br>用MOCVD方法制备的GaN_(1-x)P_x三元合金的喇曼与红外光谱
%A Zhang Kaixiao
%A Shen Bo
%A Chen Dunjun
%A Zhang Rong
%A Shi Yi
%A Zheng Youdou
%A Li Zhifeng
%A Lu Wei
%A <br>张开骁
%A 沈波
%A 陈敦军
%A 张荣
%A 施毅
%A 郑有炓
%A 李志锋
%A 陆卫
%J 半导体学报
%D 2004
%I 
%X Both Raman and infrared reflection spectra for a series of high P compositional GaN 1-xP x alloys grown by means of light-radiation heating,low-pressure metal-organic chemical vapor deposition are investigated.The Raman spectra of GaN 1-x-P x alloys,recorded in backscattering geometry,exhibit four new vibrational modes at 256,314,377,and 428cm -1 compared with an undoped GaN sample.Those modes are assigned to the so called quasi-local mode induced by P in GaN,disorder-activated scattering and gap modes related to the Ga-P bond vibrations,respectively.The frequency of the A 1(LO) mode is found to redshift,which is attributed to the effects of alloying and strain.The infrared reflectance spectra show another new mode near 630cm -1,which is associated with the E 2(TO) phonon mode that results from a random distribution of the P atoms in GaN 1-xP x alloys and elimination of lattice translational symmetry.
%K GaN
%K 1-xP
%K x
%K MOCVD
%K Raman
%K infrared reflection<br>GaN1-xPx
%K MOCVD
%K 喇曼
%K 红外反射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ADDA34D4BDEB9F9E&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=B6DA1AC076E37400&eid=987EDA49D8A7A635&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10