%0 Journal Article
%T Numerical study of the sub-threshold slope in T-CNFETs<br>T-CNFETs中亚阈值斜率的数值研究
%A Zhou Hailiang
%A Hao Yue
%A Zhang Minxuan
%A <br>周海亮
%A 郝跃
%A 张民选
%J 半导体学报
%D 2010
%I 
%X The most attractive merit of tunneling carbon nanotube field effect transistors (T-CNFETs) is the ultra-small inverse sub-threshold slope. In order to obtain as small an average sub-threshold slope as possible, several effective approaches have been proposed based on a numerical insight into the working mechanism of T-CNFETs: tuning the doping level of source/drain leads, minimizing the quantum capacitance value via tuning the bias condition or increasing the insulator capacitance, and adopting a staircase doping strategy in the drain lead. Non-equilibrium Green's function based simulation results show that all these approaches can contribute to a smaller average inverse sub-threshold slope, which is quite desirable in high-frequency or low-power applications.
%K sub-threshold slope
%K T-CNFETs
%K quantum capacitance
%K BTBT
%K NEGF<br>亚阈值斜率
%K T-CNFETs
%K 量子电容
%K 带间隧穿
%K 非平衡格林函数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=68876E47542BBB669D8834D6089BAF87&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=B069BBF730E28AFC&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0