%0 Journal Article
%T Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC<br>4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制
%A Hao Yue
%A Yang Yan
%A Zhang Jincheng
%A Wang Ping
%A <br>郝跃
%A 杨燕
%A 张进城
%A 王平
%J 半导体学报
%D 2004
%I 
%X 报道了在4H-SiC衬底上AlGaN/GaN高电子迁移率晶体管(HEMT)的研制和室温特性测试结果.器件采用栅长为0.7μm,夹断电压为-3.2V,获得了最高跨导为202mS/mm,最大漏源饱和电流密度为915mA/mm的优良性能和结果.
%K H-SiC
%K AlGaN/GaN
%K high-electron-mobility transistors<br>4H-SiC
%K AlGaN/GaN
%K 高电子迁移率晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=25705CA6A4B153FB&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=711D1EBABC3BFF4F&eid=C3D6C7213B2FE390&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7