%0 Journal Article
%T Crystalline Quality Study of MBE GaAs-o n-Si through High Energy Ion-Implantation and Subsequent Annealing<br>离子注入及退火对GaAs/Si晶体完整性影响的研究
%A Xiao Guangming/Institute of Semiconductors
%A Academia Sinica
%A ChinaYin Shiduan/Institute of Semiconductors
%A Academia Sinica
%A ChinaZhang Jingping/Institute of Semiconductors
%A Academia Sinica
%A ChinaFan Tiwen/Institute of Semiconductors
%A Academia Sinica
%A ChinaLiu Jiarui/Institute of Physics
%A Academia Sinica
%A ChinaDing Aiju/Institute of Physics
%A Academia Sinica
%A ChinaZhou Junming/Institute of Physics
%A Academia Sinica
%A ChinaZhu Peiruan/Institute of Physics
%A Academia Sinica
%A China
%A <br>肖光明
%A 殷士端
%A 张敬平
%A 范缇文
%A 刘家瑞
%A 丁爱菊
%A 周均铭
%A 朱沛然
%J 半导体学报
%D 1990
%I 
%X 本文用4.2MeV ~7Li离子卢瑟福背散射沟道技术研究了Si上外延GaAs膜在MeV Si离子注入及红外瞬态退火后的再生长过程。实验表明,离子注入可使GaAs外延膜内形成一无序网络,当注入剂量低于某一阈值时,850℃,15秒退火后,损伤区可完全再结晶,再结晶后的GaAs层的晶体质量特别在界面区有很大的改善;当剂量超过该阈值时,出现部分再结晶。激光Raman实验也表明,经过处理后的GaAs层Raman谱TO/LO声子的比率比原生长的样品有很大的降低。
%K Ion-implantation
%K Rapid thermal annealing
%K Rutherfold backscattering/channeling<br>离子注入
%K 退火
%K GaAs／Si
%K 晶体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6882BB7FECF1CA64&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=9C230FD2B3A7F308&eid=971ECAFE8682845B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0