%0 Journal Article
%T Effect of Two Step Annealing on Formation of SIMOX Structure<br>两步退火对SIMOX结构形成的影响
%A Chen Nanxiang/Institute of Microelectronics
%A Peking UniversityWang Zhonglie/Institute of Microelectronics
%A Peking UniversityHuang Chang/Shaanxi Lishan Microeletronics Research Institute
%A <br>陈南翔
%A 王忠烈
%A 黄敞
%J 半导体学报
%D 1990
%I 
%X 本文通过卢瑟夫沟道背散射(RBS/Channeling)及透射电子显微镜(TEM)研究了SIMOX结构的低、高温两步退火形成。实验结果表明:通过两步退火可以获得顶部硅层中无氧沉淀缺陷的、硅与二氧化硅界面较为突变的SIMOX结构。本文也讨论了在两步退火期间,SIMOX结构形成的物理过程。
%K Two step Annealing
%K oxygen precipitates Separation by Implanted oxygen (SIMOX)<br>SIMOX
%K 退火
%K 结构形成
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=065CC3A28248F710&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=693E1FFD7BD946DF&eid=51E4ADE955550A0C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2