%0 Journal Article
%T A New Transient V-C Method for Study of DX Centers in Al_xGa_(1-x)As<br>瞬态C-V方法对Al_xGa_(1-x)As中DX中心的研究
%A Jia Yingbo/Graduate School
%A University of Science
%A Technology of China
%A Beijing
%A ChinaLi Mingfu/Graduate School
%A University of Science
%A Technology of China
%A Beijing
%A <br>贾英波
%A 李名复
%A 周洁
%A 高季林
%A 孔梅影
%J 半导体学报
%D 1990
%I 
%X We present in this paper the importance of the edge region in capacitance measurement ofDX centers and the improvement of the step-wise charge distribution of the edge region. A newtransient C-V method is used to measure the density of DX cemters, density of bulk electrons inconduction band and the space charge distribution n the depletion region at a constant reversebais The temperature dependence of the density of bulk electrons in conduction band has alsobeen obtained. The thermal ionization energy of DX centers can be derived from these results.On the other hand, the comparison of the experimen(?)s and the theoretical curves derived fromthe negative U and positive U models of DX centers have been made and the conclusions areconsistent with our previous analysis of Hall experiments.In order to fit the theoretical curvesto the experimental data, compensating acceptors in the case of+U model, or other kind ofshallow donors in the case of-U model should be considered.
%K DX center
%K Edge region
%K Transient C-V method
%K Positive U model
%K Negatire U model<br>DX中心
%K 边区
%K 瞬态C-V测量
%K 正∪模型
%K 负∪模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3ADF48DED3A61DA3&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=AF407E3178C0B145&eid=08F83145FA367D52&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0