%0 Journal Article
%T High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching<br>离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)
%A Xu Yun
%A Cao Qing
%A Sun Yongwei
%A Ye Xiaojun
%A Hou Shihua
%A Guo Lia ng
%A Chen Lianghui
%A <br>徐云
%A 曹青
%A 孙永伟
%A 叶晓军
%A 侯识华
%A 郭良
%A 陈良惠
%J 半导体学报
%D 2004
%I 
%X 用纯Ar离子束刻蚀方法制备出大功率高效率6 5 0 nm实折射率Al Ga In P压应变量子阱激光器.对偏角衬底,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面.制备的激光器条宽腔长分别为4 μm和6 0 0 μm,前后端面镀膜条件为10 % / 90 % .室温下阈值电流的典型值为4 6 m A,输出功率为4 0 m W时仍可保持基横模.10 m W,4 0 m W时的斜率效率分别为1.4 W/ A和1.1W/ A.
%K AlGaInP visible lasers
%K Ar
%K ion beam dry etching<br>AlGaInP可见光激光器
%K Ar离子束干法刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=263F952126A5BE02&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=E062BF8B95A95FD2&eid=74253B3A525E9002&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11