%0 Journal Article
%T A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath p Well<br>新型图形化 SOI LDMOS结构的性能分析(英文)
%A Cheng Xinhong
%A Yang Wenwei
%A Song Zhaorui
%A Yu Yuehui
%A Shen Dasheng
%A <br>程新红
%A 杨文伟
%A 宋朝瑞
%A 俞跃辉
%A 沈达升
%J 半导体学报
%D 2004
%I 
%X A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.
%K patterned-SOI
%K LDMOS
%K floating body effect
%K self-heating effect<br>图形化SOI
%K LDMOS
%K 浮体效应
%K 自加热效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2EFC0086541B8B3E&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=393263B6B7532F22&eid=A7E1C896834B988A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14