%0 Journal Article
%T Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates<br>蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件(英文)
%A SHAO Gang
%A Liu Xinyu
%A He Zhijing
%A Liu Jian
%A Wu Dexin
%A <br>邵刚
%A 刘新宇
%A 和致经
%A 刘健
%A 吴德馨
%J 半导体学报
%D 2004
%I 
%X 报道了蓝宝石衬底AlGaN/GaN共栅共源器件的制备与特性.该器件包括栅长为0.8μm共源器件与栅长为1μm的共栅器件.实验表明,共栅器件的第二栅压会显著影响器件饱和电流与跨导特性,从而控制功率增益.与共源器件相比,共栅共源器件表现出稍低的fT、较低的反馈、显著增加的功率资用增益及较高的端口阻抗.
%K cascade
%K broadband
%K AlGaN/GaN
%K HEMTs
%K sapphire<br>共栅共源
%K 宽带
%K AlGaN/GaN
%K HEMTs
%K 蓝宝石
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=552DCB75A5AEEADF&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=E30A3BF9610C35C9&eid=FAE014814EB8ABBA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11