%0 Journal Article
%T Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress<br>恒电流应力引起HfO_2栅介质薄膜的击穿特性
%A Han Dedong
%A Kang Jinfeng
%A Wang Chenggang
%A Liu Xiaoyan
%A Han Ruqi
%A Wang Wei
%A <br>韩德栋
%A 康晋锋
%A 王成钢
%A 刘晓彦
%A 韩汝琦
%A 王玮
%J 半导体学报
%D 2004
%I 
%X Ultra thin high k HfO 2 gate dielectrics films are fabricated by reacting magnetron sputtering and furnace annealing.Breakdown characteristics (soft breakdown and hard breakdown) of gate dielectrics are studied.Results show that breakdown characteristic of thin gate dielectrics is different from that of thick gate dielectrics.Thus, breakdown mechanism of gate dielectrics under constant current stress is studied.
%K constant current stress
%K high
%K k
%K HfO
%K 2
%K breakdown<br>恒电流应力
%K 高k
%K HfO2
%K 击穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8A769A54933F9DDA&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=5D311CA918CA9A03&sid=9F481C73BF82C48F&eid=85873A559EE29055&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14