%0 Journal Article
%T Binding Energy Calculation of Hydrogenic Impurities in GaAs-Ga_(1-x)Al_xAs Quantum Well in Vertical Magnetic Field<br>垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算
%A Li Shushen/
%A <br>李树深
%A 焦善庆
%J 半导体学报
%D 1990
%I 
%X The binding energies of the ground state and the low-lying excited states of hydrogenic impurities in quantum well in a vertical magnetic fielo have been calculated applying the method of one dimensionalization and the effective mass approximation. In calculation, the effects due to different effective masses and dielectric constants in GaAs-GaAlAs layers are included. The results agree well with the experimental results.
%K QW
%K Superlattice
%K GaAs
%K GaAlAs<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EF95F4BE0B2221DE&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=9CF7A0430CBB2DFD&sid=AEE2F90BC0DB5F35&eid=E4BEEBB9A80BC67E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0