%0 Journal Article
%T LPMOVPE生长GaAs∶C薄膜
%A 吴惠桢
%A J Antoszkiewicz
%J 半导体学报
%D 1997
%I 
%X 本文用低压金属有机气相外延技术和四溴化碳作为掺杂源生长重掺碳GaAs∶C．由于采用了较高衬底温度，GaAs∶C的空穴迁移率比相同空穴浓度条件下，用铍、锌等常用p型掺杂原子生长的GaAs高；文中还分析了由于重掺碳引起的晶格收缩．
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=28BB4145A8A02300&yid=5370399DC954B911&vid=13553B2D12F347E8&iid=B31275AF3241DB2D&sid=216EFB25F7F834CC&eid=1FF3CD54EFC256A1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0