%0 Journal Article
%T Second-Order Raman Scattering from n- and p-Type 4H-SiC<br>n型和p型4H-SiC的二级喇曼谱(英文)
%A Gao Xin
%A SUN Guosheng
%A Li Jinmin
%A Wang Lei
%A Zhao Wanshun
%A ZHANG Yongxin
%A Zeng Yiping
%A <br>高欣
%A 孙国胜
%A 李晋闽
%A 王雷
%A 赵万顺
%A 张永新
%A 曾一平
%J 半导体学报
%D 2004
%I 
%X The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm -1 with energy difference about 10cm -1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm -1 of the second-order Raman is not the overtone of the A 1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density.
%K H-SiC
%K second-order Raman
%K cutoff frequency<br>4H-SiC
%K 二级喇曼谱
%K 截止频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0D7EFE65A0D116F3&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=43797DD45B2BF7AC&eid=0E6C9B38667ABC5C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20