%0 Journal Article
%T Total Dose Irradiation Effects on Multi-Level Flash Memories<br>多能级闪存的总剂量辐射效应
%A Meng Xuanhua
%A Yin Luke
%A Gu Jing
%A He Guowei
%A <br>孟宣华
%A 殷光迁
%A 顾靖
%A 何国伟
%J 半导体学报
%D 2003
%I 
%X A new flash memory based on multi-level storage technique is introduced,and the gamma irradiation effects on such multi-level flash memory are investigated.The threshold voltage and the cell's electrical performance related to the total-dose,dose rate and time are studied in detail.The experiment results are discussed.
%K multi-level flash memory
%K floating gate
%K gamma irradiation
%K irradiation effects<br>多能级闪存
%K 浮栅
%K γ射线
%K 辐射效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B6EB36BDE2A47AA4&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=B31275AF3241DB2D&sid=46682C11199DA00C&eid=A0C7970CD30381EA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=18