%0 Journal Article
%T Nonresonant Magneto-Tunneling in Asymmetric GaAs/AlAs Double Barrier Structures<br>不对称双势垒结构中的非共振磁隧穿现象
%A Yang Fuhua/National Laboratory for Superlattice
%A Related Microstructures
%A Institute of Semiconductors
%A Academia Sinica
%A P O Box
%A Beijing China Zheng Houzhi/National Laboratory for Superlattice
%A Related Microstructures
%A Institute of Semiconductors
%A Academia Sinica
%A P O Box
%A Beijing China Chen Zonggui/National Laboratory for Superlattice
%A Related Microstructures
%A Institute of Semiconductors
%A Academia Sinica
%A P O Box
%A Beijing China
%A <br>杨富华
%A 郑厚植
%A 陈宗圭
%J 半导体学报
%D 1990
%I 
%X The characteristic differences in nonresonant magneto-tunneling processes measured from anumber of asymmetric GaAs/AlAs double-barrier resonant-tunneling structures in two oppositebiases have systemmatically been studied, and ascribed to the different dwell times of traversingelectrons in the well as they tunnel along two opposite directions.
%K Resonant Tunneling
%K Nonresonant Magneto-Tunneling
%K Magneto-Tunneling spectra
%K Phonon scattering
%K Dwell time<br>共振隧穿
%K 非共振磁隧穿
%K 磁隧穿谱
%K 声子散射
%K 渡越时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=293AF28C985F3D94&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=5D311CA918CA9A03&sid=90075EB19043D533&eid=1FA4E9C3E6E88FC8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0