%0 Journal Article
%T Current-Voltage Characteristics of Hg_(1-x)Cd_xTe p-n Junctions under Hydrostatic Pressure<br>流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性
%A LI Qiguang/Laboratory for Infrared Physics
%A <br>李齐光
%A 姜山
%A 袁皓心
%A 陈泉森
%A 沈学础
%J 半导体学报
%D 1990
%I 
%X The hydrostatic pressure dependence of the current-voltage characteristics of Hg_(1-x)Cd_xTep-n junctions with x=0.5 has been studied at room temperature and 77K.The pressure coefficientof the energy gap Eg was obtained.It is found that Eg increases linearly with pressure inthe low pressure range 01.4Pa) atroom temperature, Eg versus pressure deviates from this linearity remarkably. It is als observedthat, in the small forward and reverse bias region,the pressure dependence of the I-V characteristicsexhibits an "anomalous" bchavior.
%K Hydrostatic pressure
%K Hg_(1-x)Cd_xTe
%K Current-voltage characteristics of p-n junction
%K Energy gap<br>HgCdTe
%K P－n结
%K 流体静压力
%K 伏安特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7F44FF6065CAC3A826E748A7EB46DC81&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=68D88C2FCF9C3098&eid=4F2F18DD6F870C2C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=3