%0 Journal Article
%T Fabrication and Characteristics of a Si-Based Single Electron Transistor<br>硅单电子晶体管的制造及特性(英文)
%A Lu Gang
%A Chen Zhiming
%A Wang Jiannong
%A Ge Weikun
%A <br>卢刚
%A 陈治明
%A 王建农
%A 葛惟昆
%J 半导体学报
%D 2002
%I 
%X Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.
%K single electron transistor
%K Coulomb blockade
%K single electron tunneling
%K quantum dot
%K electron beam lithography<br>单电子晶体管
%K 库仑阻塞
%K 单电子隧穿
%K 量子点
%K 电子束光刻技术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C95C608C40108DE6&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=38B194292C032A66&sid=28F9D9CF04F424FF&eid=1D01216AD76577EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=0