%0 Journal Article
%T Electron and Ion Beam Irradiation Effects in AES Analysis of Silicon Nitride and Oxynitride Thin Films<br>氮化硅和氮氧化硅在俄歇电子谱分析中的电子束和离子束辐照效应
%A Chen We de/Institute of Semiconductors
%A Acadcmia SinicaH Bender/IMEC
%A Leuven BelgiumH E Maes/IMEC
%A Leuven Belgium
%A <br>陈维德
%A H.Bender
%A H.E.Maes
%J 半导体学报
%D 1990
%I 
%X Electron and Ion Beam irradiation effects in AES analysis of silicon nitride and oxynitridehave been investigated. The results show that no any damaged feature peaks are observedeven under a focused electron beam irradiation. A prolonged irradiation only results in.increaseof Si LVV and N KLL PPH values and decrease of oxygen contamination until a steady stateis reached. However, the surface of silicon nitride and oxynitride thin films are very susceptibleto damage by energetic ion impact.The damaged surface can be recovered by irradiationwith an electron beam in the UHV system. The degree of recovery not only has a closerelation with the current density, beem energy, irradiation time but also with the preparationof the films.The mechanism of the damage and recovery is discussed.
%K AES
%K Silicon nitride
%K Silicon oxynitride<br>俄歇电子谱
%K 氮化硅
%K 氮氧化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9F5B5026B5E52FD4&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=B31275AF3241DB2D&sid=5319469C819FCFF1&eid=C66DE7562B0326E2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0