%0 Journal Article
%T Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices
%A Wu Junfeng
%A Zhong Xinghua
%A Li Duoli
%A Kang Xiaohui
%A Shao Hongxu
%A YANG Jianjun
%A Hai Chaohe
%A Han Zhengsheng
%A <br>Wu Junfeng
%A Zhong Xinghu
%A Li Duoli
%A Kang Xiaohui
%A Shao Hongxu
%A Yang Jianjun
%A Hai Chaohe
%A and Han Zhengsheng
%J 半导体学报
%D 2005
%I 
%X Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technology,respectively.Off-state breakdown characteristics of these devices are presented with and without body contact,respectively.By means of two-dimension(2D) device simulation and measuring junction breakdown of the drain and the body,the difference and limitation of the breakdown characteristics of devices with two technologies are analyzed and explained in details.Based on this,a method is proposed to improve off-state breakdown characteristics of PDSOI nMOS devices.
%K partial-depleted SOI
%K body-tied
%K breakdown
%K silicide
%K H-gate<br>partial-depleted
%K SOI
%K body-tied
%K breakdown
%K silicide
%K H
%K gate
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C0DABDC7E6F60A39&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=46682C11199DA00C&eid=8DDBA6455F2E3ECF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10