%0 Journal Article
%T Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate
%A Zhong Xinghua
%A Wu Junfeng
%A YANG Jianjun
%A Xu Qiuxia
%A <br>Zhong Xinghu
%A Wu Junfeng
%A Yang Jianjun
%A and Xu Qiuxia
%J 半导体学报
%D 2005
%I 
%X Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.
%K equivalent oxide thickness
%K nitride/oxynitride gate dielectric stack
%K high k
%K boron-penetration
%K metal gate<br>equivalent
%K oxide
%K thickness
%K nitride/oxynitride
%K gate
%K dielectric
%K stack
%K high
%K k
%K boron
%K penetration
%K metal
%K gate
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=30DE108D4D8A8F6E&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=7004BE6E41AAF52C&eid=04FC77FB58A9B53A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=11