%0 Journal Article
%T Study on Vacuum Sensitive Mechanism of Surface States Silicon by Photovoltaic Method<br>光伏法研究硅单晶表面态真空敏感机理
%A Yan Yongmei
%A Sun Yiyang
%A Ding Xiaoyong
%A Zhou Haiwen
%A <br>颜永美
%A 孙宜阳
%A 丁小勇
%A 周海文
%J 半导体学报
%D 2002
%I 
%X A mechanism model of the sensitive effect of vacuum conditions on the surface states of silicon crystal is proposed,from study on the adsorption mechanism of gaseous molecules on the surface of semiconductor by photovoltaic method.Consequently the relative observed results from the vacuum sensors based on the surface state sensitivity are clearly explained.Thereby,it can be confirmed that the essential cause of the vacuum sensitive for the surface states of silicon is that the electron affinity potentials of nitrogen element and oxygen element,relative to of silicon element,have obviously different and sign opposite difference values.It can cause the charge transfers with different directions between N 2,O 2 molecules adsorbed on silicon surface and the surface states of silicon and their difference value varies with the change of vacuousness.
%K semiconductor surface state
%K vacuum sensitive mechanism
%K photovoltaic method<br>半导体表面态
%K 真空敏感机理
%K 光伏方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ECD1E5E266468444&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=CA4FD0336C81A37A&sid=659D3B06EBF534A7&eid=C5154311167311FE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8