%0 Journal Article
%T Electron Microscopy and Photoluminescence Studies of GaAs/Al_xGa_(1-x)As Quantum wells<br>量子阱材料的电子显微镜及光致发光研究
%A Fan Tiwen/Institute ot Semiconductors
%A Academia Sinica China
%A Beijing Laboratory of Electron Microscopy
%A Academia Sinica China Zhang Yonghang/Institute ot Semiconductors
%A Academia Sinica China Zeng Yiping/Institute ot Semiconductors
%A Academia Sinica China Chen Lianghui/Institute ot Semiconductors
%A Academia Sinica China Hsu Tung/
%A <br>范缇文
%A 张永航
%A 曾一平
%A 陈良惠
%A 徐统
%J 半导体学报
%D 1990
%I 
%X Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/Al_xGa_(1-x)As quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.
%K Quantum well
%K Molecular beam epitaxy
%K Photoluminescence
%K Electron microscopy
%K Interface<br>量子阱材料
%K 电子显微镜
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AEBCFE3E4D04D35E&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=9CF7A0430CBB2DFD&sid=C19D5524C51D7FE4&eid=C3BC38F6CC09E835&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1