%0 Journal Article
%T AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz
%A Li Xianjie
%A Zeng Qingming
%A Zhou Zhou
%A Liu Yugui
%A Qiao Shuyun
%A Cai Daomin
%A Zhao Yonglin
%A Cai Shujun
%A
Li Xianjie
%A Zeng Qingming
%A Zhou Zhou
%A Liu Yugui
%A Qiao Shuyun
%A Cai Daomin
%A Zhao Yonglin
%A Cai Shujun
%J 半导体学报
%D 2005
%I
%X 制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0.3μm栅长、100μm栅宽的器件的饱和漏电流密度为0.85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1.8W/mm和9.5dB,8GHz频率下输出功率密度和增益分别为1.12W/mm和11.5dB.
%K AlGaN/GaN
%K HEMT
%K sapphire
AlGaN/GaN
%K HEMT
%K 蓝宝石
%K AlGaN/GaN
%K HEMT
%K sapphire
%K 蓝宝石衬底
%K AlGaN
%K 高电子迁移率晶体管
%K Transistors
%K output
%K power
%K unity
%K drain
%K current
%K gain
%K cutoff
%K frequency
%K maximum
%K oscillation
%K voltage
%K peak
%K transconductance
%K device
%K saturation
%K density
%K gate
%K length
%K width
%K high
%K electron
%K mobility
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E308D38522372421&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=53A9347E622951C1&eid=E1A8B116B8F72D84&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7