%0 Journal Article %T AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz %A Li Xianjie %A Zeng Qingming %A Zhou Zhou %A Liu Yugui %A Qiao Shuyun %A Cai Daomin %A Zhao Yonglin %A Cai Shujun %A
Li Xianjie %A Zeng Qingming %A Zhou Zhou %A Liu Yugui %A Qiao Shuyun %A Cai Daomin %A Zhao Yonglin %A Cai Shujun %J 半导体学报 %D 2005 %I %X 制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0.3μm栅长、100μm栅宽的器件的饱和漏电流密度为0.85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1.8W/mm和9.5dB,8GHz频率下输出功率密度和增益分别为1.12W/mm和11.5dB. %K AlGaN/GaN %K HEMT %K sapphire
AlGaN/GaN %K HEMT %K 蓝宝石 %K AlGaN/GaN %K HEMT %K sapphire %K 蓝宝石衬底 %K AlGaN %K 高电子迁移率晶体管 %K Transistors %K output %K power %K unity %K drain %K current %K gain %K cutoff %K frequency %K maximum %K oscillation %K voltage %K peak %K transconductance %K device %K saturation %K density %K gate %K length %K width %K high %K electron %K mobility %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E308D38522372421&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=53A9347E622951C1&eid=E1A8B116B8F72D84&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7