%0 Journal Article
%T Characteristics of ONO in Flash Memory Device<br>Flash器件中氧化硅/氮化硅/氧化硅的特性
%A Ou Wen
%A Li Ming
%A Qian He
%A <br>欧文
%A 李明
%A 钱鹤
%J 半导体学报
%D 2003
%I 
%X The processing technique of ONO(oxide/nitride/oxide) and analysis on characteristics of ONO are performed.A higher couple coefficient and lower operating voltage can be obtained by taking thinner bottom oxide and thicker top oxide which can obtain higher critical electric field and thinner efficient oxide.
%K flash memory
%K ONO
%K leakage current
%K critical electric field<br>快闪存储器
%K ONO介质层
%K 漏电
%K 临界电场强度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7EDAAC95C003BA3C&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=94C357A881DFC066&sid=AF0641F74554D706&eid=89389F643CA3F778&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10