%0 Journal Article
%T The Effects of Barrier Lowering Induced by Image Potential on the Direct Tunneling Current in Ultrathin MOS Structures<br>镜像势引起的势垒降低对超薄栅MOS结构的直接隧穿电流的影响
%A MAO Ling-feng
%A WEI Jian-lin
%A MU Fu-chen
%A TAN Chang-hua
%A XU Ming-zhen
%A <br>毛凌锋
%A 卫建林
%A 穆甫臣
%A 谭长华
%A 许铭真
%J 半导体学报
%D 2001
%I 
%X The direct tunneling current is replaced FN tunneling as the main issue affecting the MOS device reliability.The barrier lowering induced by image potential is proved to influence the tunneling current largely.An qualitative equation is obtained for the first time by using WKB app roximation.The effects of image potential on the tunneling current increase with the decrease of the applied voltage across the oxide,but decrease with the decr ease of the oxide thickness.
%K image potential
%K direct tunneling
%K MOS<br>镜像势
%K 直接隧穿
%K MOS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=14D0E72823FD3DC9&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=5D311CA918CA9A03&sid=3F10405738B4D004&eid=1EA033F7E0CC5F25&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20