%0 Journal Article
%T Miscibility Calculation of InGaN Alloy<br>InGaN混溶隙的计算
%A TONG Yu
%A |zhen
%A CHEN Ying
%A |yong
%A ZHANG Guo
%A |yi
%A <br>童玉珍
%A 陈英勇
%A 张国义
%J 半导体学报
%D 2000
%I 
%X The miscibility of InGaN/GaN system is calculated by using the modified Valence\|Force\|Field model and the regular solution model,as well as introducing the mismatch strain item, and considering the dependence of interaction factor and stiffness coefficient on the indium content.The results demonstrates that the miscibility of InGaN becomes asymmetry and shifts to the higher InN content area.The critic temperature also decreased to about 1000K.At the same time,the effect of the stiffness coefficient on the miscibility is took into consideration.Furthermore,the calculation model is expanded to the In x Ga 1- x N/In y Ga 1-y N system.
%K miscibility
%K InGaN
%K strain<br>混溶隙
%K InGaN
%K 应力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E7175A0C6096BCE7&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=DF92D298D3FF1E6E&sid=6C62BFE34266FA92&eid=7004BE6E41AAF52C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=24