%0 Journal Article
%T Multi-Buffer Layers Effect on Characteristic of GaN Grown by MOCVD<br>多缓冲层对MOCVD生长的GaN性能的影响
%A Lu Min
%A Fang Huizhi
%A Li Zilan
%A Lu Shu
%A Yang Hua
%A Zhang Bei
%A Zhang Guoyi
%A <br>陆敏
%A 方慧智
%A 黎子兰
%A 陆曙
%A 杨华
%A 章蓓
%A 张国义
%J 半导体学报
%D 2004
%I 
%X GaN films were grown with different multi buffer layers by MOCVD.X ray diffraction and photoluminence were applied to study the characteristic of GaN films.Compared to GaN film with conventional single low temperature buffer layer,the FWHM of (0002) XRD and PL of GaN films with different multi buffer layers were narrowed.It indicated that these multi buffer layers techniques could improve crystal quality of GaN films.
%K MOCVD
%K GaN
%K buffer layer<br>MOCVD
%K GaN
%K 缓冲层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EE448CD35DFF84DA&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=94C357A881DFC066&sid=E3D3D8D1B650AE1E&eid=2A2AA8B7E19F0DF7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=10&reference_num=16