%0 Journal Article
%T Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer<br>基于多孔硅牺牲层技术的压阻式加速度传感器的分析和设计(英文)
%A Zhou Jun
%A Wang Xiaohong
%A YAO Pengjun
%A Dong Liang
%A Liu Litian
%A <br>周俊
%A 王晓红
%A 姚朋军
%A 董良
%A 刘理天
%J 半导体学报
%D 2003
%I 
%X A piezoresistive silicon accelerometer fabricated by a selective,self-stopping porous silicon (PS) etching method using an epitaxial layer for movable microstructures is described and analyzed.The technique is capable of constructing a microstructure precisely.PS is used as a sacrificial layer,and releasing holes are etched in the film.TMAH solution with additional Si powder and (NH_4)_2S_2O_8 is used to remove PS through the small releasing holes without eroding uncovered Al.The designed fabrication process is full compatible with standard CMOS process.
%K accelerometer
%K porous silicon
%K micromachining
%K sacrificial layer
%K MEMS<br>加速度传感器
%K 多孔硅
%K 微加工
%K 牺牲层
%K 微机电系统
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8C94BEA1A465173E&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=DF92D298D3FF1E6E&sid=F4C2D192FB73A21F&eid=15F713CDE16A589C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=8