%0 Journal Article
%T Difference Between GaN Films Grown on Two Opposite Oriented c-Al2O3 Substrates<br>在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异
%A HAN Pei-de
%A DUAN Xiao-feng
%A SUN Jia-long
%A ZHANG Ze
%A WANG Zhan-g uo
%A <br>韩培德
%A 段晓峰
%A 孙家龙
%A 张泽
%A 王占国
%J 半导体学报
%D 2001
%I 
%X Two pairs of GaN films are grown on two o p posite c -Al 2O 3 substrates by metal-organic vapor phase epitaxy.These f ilms are studied by scanning electron microscopy,Auger electron spectrosco py and converged beam electron diffraction.It was found that the GaN film on the c -face forward to Al 2O 3 seed had polarity and its surface-pi ts relat ed to the film defects and its N/Ga atom-ratio was small.But the GaN film on th e c-face backward to the seed had ooo1] polarity and its surface pits realted to the substrat morphology and its N/Ga atom-tatio was large .The mechanism for forming different color in both buffer layers is also discussed
%K polarity
%K GaN
%K MOVPE
%K microcosm instrcture<br>极性
%K GaN
%K MOVPE
%K 微观结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5B90FC9DC24D5309&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=5D311CA918CA9A03&sid=0342E221E01D5238&eid=78996380F3108204&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9