%0 Journal Article
%T Growth of 3C-SiC from Silicon Solvent and Restrain of 6H-SiC<br>硅熔体中3C-SiC的生长及6H-SiC晶型的抑制
%A 马剑平
%A 卢刚
%A 雷天民
%A 陈治明
%J 半导体学报
%D 2001
%I 
%X SiC lamella has been prepared in saturated silicon solvent by carbon,from the inner wall of high pure graphite crucible,in which Si is melted at high temperature.The samples are characterized by XRD,XPS,Raman Spectroscopy,etc.The results suggest that the sample prepared with the new method is 3C-SiC polycrystalline.It also shows that it is possible to restrain the 6H-SiC in the process of 3C-SiC growth from silicon solvent,by using the technique properly,as has been briefly discussed.
%K silicon
%K solvent
%K silicon carbide
%K restrain<br>硅
%K 熔体
%K 碳化硅
%K 抑制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=614E561C771E8C9B&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=B31275AF3241DB2D&sid=8A6D8366EA57F0FF&eid=9409F3EB075DCD5B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0