%0 Journal Article
%T Reflective IR-Spectrum Study of Buried Insulator Layer in Ion Implanted Silicon<br>离子注入硅形成绝缘埋层的红外反射谱分析
%A Fang Ziwei/Ion Beam Laboratory
%A <br>方子韦
%A 俞跃辉
%A 林成鲁
%A 邹世昌
%J 半导体学报
%D 1990
%I 
%X High quality SOI(silicon on Insulator) materials with single crystalline silicon top layercan be obtained by O~+ or N~+ implantation with high dosage,large beam current into siliconfollowed by a high temperature annealing.lnfrarec light with wavenumber ranging from5000 cm~(-1)to 1500 cm_(-1)is not absorbed by silicon,SiO_2 and Si_3N_4.In this wavenumber range,the reflective IR-spectra of samples prepared in different ways were simulated and the refractiveindex profiles were obtained.The results are in consistent with that obtained from transmissionelectron microscope and Rutherford backsca tering and channeling analysis.
%K SOI
%K Ion implantation
%K Reflective IR-spectrum
%K Simulation<br>离子注入
%K 硅
%K 红外反射谱
%K 绝缘埋层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=34197FB384BCD6D1&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=30897FA31CA3354D&eid=1A363081E1FF7014&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3