%0 Journal Article
%T Ultra-Thin Si3N4/SiO2(N/O) Stack Gate Dielectrics and Devices<br>超薄Si3N4/SiO2（N/O）stack栅介质及器件
%A Lin Gang
%A Xu Qiuxia
%A <br>林钢
%A 徐秋霞
%J 半导体学报
%D 2005
%I 
%X 成功制备了EOT(equivalent oxide thickness)为2.1nm的Si3N4/SiO2(N/O) stack栅介质,并对其性质进行了研究．结果表明，同样EOT的Si3N4/SiO2 stack栅介质和纯SiO2栅介质比较，前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者．在此基础上,采用Si3N4/SiO2 stack栅介质制备出性能优良的栅长为0.12μｍ的CMOS器件，器件很好地抑制了短沟道效应．在Vds=Vgs=±1.5V下，nMOSFET和pMOSFET对应的饱和电流Ion分别为584.3μA/μｍ和－281.3μA/μｍ，对应Ioff分别是8.3nA/μｍ和－1.3nA/μｍ．
%K ultra-thin Si
%K 3N
%K 4/SiO
%K 2(N/O)stack gate dielectrics
%K tunneling leakage current
%K SILC characteristics
%K gate dielectrics lifetime
%K CMOS devices<br>超薄Si3N4/SiO2(N/O)stack栅介质
%K 栅隧穿漏电流
%K SILC特性
%K 栅介质寿命
%K CMOS器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E23F0EF63DABE2D8&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=EDA22B444205D04A&eid=EFD65B51496FB200&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9