%0 Journal Article
%T GaAs/GaAlAs Single Quantum Well Electroabsorption and Light Modulation<br>GaAs/GaAlAs单量子阱电光吸收和光调制
%A Zhu Longde/Institute of Semiconductors
%A Academia Sinica
%A BeijingXiong Feike/Institute of Semiconductors
%A Academia Sinica
%A BeijingWang Qiming/Institute of Semiconductors
%A Academia Sinica
%A BeijingChen Zhenghao/Institute of Semicouductors
%A Academia Sinica
%A BeijingXie Yuanlin/Institute of Semicouductors
%A Academia Sinica
%A BeijingGu Shijie/Institute of Semicouductors
%A Academia Sinica
%A Beijing
%A <br>朱龙德
%A 能飞克
%A 王启明
%A 陈正豪
%A 谢苑林
%A 顾世杰
%J 半导体学报
%D 1990
%I 
%X 制作并研究了GaAs/GaAlAs分别限制单量子阱台面条形单模波导电致吸收光调制器。量子阱宽度为100A,长度为700μm的器件,当传输光波长为8650A时TE偏振最大调制深度(开关比)为29.7dB,插入损耗吸收分量为3dB;TM偏振最大调制深度为28.5dB。用2V电压幅度可以得到15dB的开关比。光电导谱的测量表明,偏压从+0.5V变到-7V时吸收边的红移为600A,即量子阱中室温激子的共振吸收峰移动了96meV。单阱高场条件下首次观察到了导带第二能级电子和价带第一能级空穴间激子的共振吸收线的出现,增强和移动。
%K GaAs/GaAlAs single quantum well
%K single mode ridge waveguide
%K modulator
%K quantum confined stark effect
%K modulation depth (or on/off ratio)
%K prohibited transition<br>GaAs／GaAlAs
%K 量子讲
%K 电光吸收
%K 调制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E3CFBBC8E5E1108B&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=38B194292C032A66&sid=974CBB04624305A1&eid=79D2EF35F60110C2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0