%0 Journal Article
%T A Novel Low Power Loss IGBT (LPL-IGBT) and Its Simulation<br>低功耗IGBT(LPL-IGBT)及其仿真
%A WU Yu
%A LU Xiu hong
%A KANG Bao wei
%A WANG Zhe
%A CHENG Xu
%A GAO Yan
%A <br>吴郁
%A 陆秀洪
%A 亢宝位
%A 王哲
%A 程序
%A 高琰
%J 半导体学报
%D 2001
%I 
%X A new structure IGBT,named Low Power Loss IGBT (LPL IGBT) is proposed.It keeps the advantages of NPT IGBTs because of its very thin and lightly doped p type back emitter formed using ion implantation.Meanwhile,it also takes the advantages of PT IGBTs due to its n type buffer layer which is the residual layer of the pre diffused n + region at the backside of the n - substrate.Simulation results show that its turn off power loss is almost a half of that of the PT IGBT or NPT IGBT.Furthermore,its structure is more suitable for practical production than FSIGBT.
%K PT
%K IGBT
%K NPT
%K IGBT
%K on
%K state voltage
%K turn
%K off power loss<br>PT-IGBT
%K NPT-IGBT
%K 通态压降
%K 关断损耗
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E340099D8921286C&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=59906B3B2830C2C5&sid=CA107AA458C36D25&eid=E7F877B2C3026178&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=2