%0 Journal Article
%T Development of Broadband 3-5μm Quantum Well Infrared Photodetectors<br>宽带3—5μm量子阱红外探测器的研制
%A LI Hong-wei
%A LI Wei
%A HUANG Qi
%A ZHOU Jun-ming
%A <br>李宏伟
%A 李卫
%A 黄绮
%A 周均铭
%J 半导体学报
%D 2000
%I 
%X 采用分子束外延方法在GaAs衬底上生长了n型掺杂的应变InGaAs/AlGaAs多量子阱结构,制作成 3—5μm波段的量子阱红外探测器 ,响应峰值波长 λp=4.2μm,响应带宽可达 Δλ/λ=50% ,500K黑体探测率 D*BB(500,1000,1 )达 1.7E10 cm.Hz1/2/W.
%K quantum well infrared photodetector
%K detectivity
%K InGaAs/AlG<br>量子阱红外探测器
%K 探测率
%K InGaAs/AlGaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7640BA25ACE240FD&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=59906B3B2830C2C5&sid=82A2BA02DFB40363&eid=7C786AA9670CF26C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8