%0 Journal Article
%T Extraction of Ultra-Thin Gate Oxide Thickness<br>超薄SiO_2栅介质厚度提取与分析
%A Tan Jingrong
%A Xu Xiaoyan
%A Huang Ru
%A Cheng Xingzhi
%A Zhang Xing
%A <br>谭静荣
%A 许晓燕
%A 黄如
%A 程行之
%A 张兴
%J 半导体学报
%D 2004
%I 
%X Based on the analysis of quasi-classical model and quantam model,a new empirical method is presented to extract the oxide thickness from measured C-V curves in accumulation region of MOS capacitors.The extracted results a re in good agreement with the results measured by ellipsometry.
%K ultra-thin gate dielectrics
%K quantum effect
%K poly-Si depletion effect
%K gate oxide thickness<br>超薄栅介质
%K 量子效应
%K 多晶硅耗尽效应
%K 栅氧厚度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5F8B3463D591F7F7&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=10F17081942653E7&eid=BBED0819A2A875B8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5