%0 Journal Article
%T Analytical Model Aimed at Source/Drain Series Resistance for 6H-SiC PMOSFET<br>考虑源漏串联电阻时6H-SiC PMOSFET解析模型
%A Gao Jinxia
%A Zhang Yimen
%A Zhang Yuming
%A <br>郜锦侠
%A 张义门
%A 张玉明
%J 半导体学报
%D 2004
%I 
%X A new model aimed at the source/drain series res is tances is presented for SiC PMOSFET.The calculated results are well corresponden t with the measured results.
%K H-SiC
%K PMOSFET
%K source/drain series resista nces
%K analytical model<br>6H-SiC
%K PMOSFET
%K 源漏串联电阻
%K 解析模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F4574F5274880E92&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=4944E31C6DB9BAF5&eid=A903BA7BF48F47AE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13