%0 Journal Article
%T Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects
%A Sun Xiuping
%A Feng Kecheng
%A Li Chao
%A Zhang Hongxia
%A Fei Yunjie
%A <br>Sun Xiuping
%A Feng Kecheng
%A Li Chao
%A Zhang Hongxi
%A and Fei Yunjie
%J 半导体学报
%D 2005
%I 
%X Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples.
%K ion implantation
%K diamond film
%K p-n junction<br>ion
%K implantation
%K diamond
%K film
%K p-n
%K junction
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9B8E1F0A5B0CCC93&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=F79A45851FD04E0C&eid=BB5084A31068995F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7