%0 Journal Article
%T Influence of Light Intensity on Internal Field-Assisted Photoemission Characteristics of Ag-BaO Thin Film<br>入射光强对Ag-BaO薄膜内场助光电发射特性的影响
%A ZHANG Qi-feng
%A WU Jin-lei
%A <br>张琦锋
%A 吴锦雷
%J 半导体学报
%D 2000
%I 
%X Enhanced photoemission of Ag-BaO thin film under different light intensity was observed when an internal field-assisted bias was applied to the thin film. The increasing process of the photoemission current with the applied bias consists of fast stage and slow one, and between these two stages there is a transitional voltage related to the light intensity. The enhanced photoemission is explained as the decrease of interfacial barrier between Ag particles and BaO matrix and the degradation of vacuum level at the surface. The existence of transitional vo ltage is due to the different effects of the interfacial barrier and vacuum leve l on the photoemission enhancement. The influence of light intensity on the tran sitional voltage comes from the variations in the interior electric field, which are caused by the photogenerated-carriers in the thin films.
%K internal field-assisted photoemission
%K ultrafine particles-semiconductor thin
%K fil<br>内场助光电发射
%K 超微粒子-半导体薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FFC3E609E8750BD3&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=59906B3B2830C2C5&sid=05FAA4D00F9315BD&eid=DA7365F2D81A3FCE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=20