%0 Journal Article
%T Effect of Sulfur Passivation on Electronic Structure and Magnetism of Fe/GaAs(1O0)<br>硫钝化对Fe/GaAs(100)界面电子结构和磁性质的影响
%A XU Peng
%A |shou
%A ZHANG Fa
%A |pei
%A ZHU Chuan
%A |gang
%A LU Er
%A |dong
%A XU Fa
%A |qiang
%A PAN Hai
%A |bin
%A ZHANG Xin
%A |yi
%A <br>徐彭寿
%A 张发培
%A 祝传刚
%A 陆尔东
%A 徐法强
%A 潘海斌
%A 张新夷
%J 半导体学报
%D 2000
%I 
%X The electronic structure and magnetism of Fe overlayer evaporated on sulfur passivated GaAs(100) by using CH\-3CSNH\-2 have been studied with synchrotron radiation photoemission (SRPES) and ferromagnetic resonance (FMR).The experimental results show that sulfur passivation can prevent As from diffusing into Fe overlayer,weaken the reaction of As with Fe and enhance the magnetism of Fe films.
%K sulfur passivation
%K semiconductor interface
%K electronic structure
%K magnetism<br>硫钝化
%K 半导体界面
%K 电子结构
%K 磁性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A8EABE967EAB9437&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=9D9F10A828991FA6&eid=3622B70F9C54A9CC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13